| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photo element which can prevent the peeling of a metal electrode layer and can control the rise of contact resistance. SOLUTION: The semiconductor photo element LD10 includes a semiconductor multi-layer structure 37 which contains an active layer 26, p-type clad layer 34, and contact layer 36 laminated on an n-type GaN substrate 12 in order, a waveguide path ridge 40 which is formed of the contact layer 36 of the semiconductor multi-layer structure 37 and a part of the p-type clad layer 34, a first silicon insulating film 44 which has an opening 44a corresponding to the top of the waveguide path 40 and covers the side wall of the waveguide path 40, an adhered layer 45 which contains a first adhered layer 45a composed of Ti located on the first silicon insulating film 44 except for the opening 44a, and a p-side electrode 46 which is located on the adhered layer 45 and is adhered on the contact layer 36 of the top of the waveguide path ridge 40 through the opening 44a. COPYRIGHT: (C)2008,JPO&INPIT
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