发明名称 |
ETCHING LIQUID, ETCHING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENT |
摘要 |
An etching liquid used for selectively etching silicon nitride, the etching liquid includes: water; a first liquid that can be mixed with the water to produce a mixture liquid having a boiling point of 150° C. or more; and a second liquid capable of producing protons (H<SUP>+</SUP>). Alternatively, an etching liquid includes: water; phosphoric acid; and sulfuric acid, the phosphoric acid and the sulfuric acid having a volume ratio of 300:32 to 150:300.
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申请公布号 |
US2008064223(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070690438 |
申请日期 |
2007.03.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EGUCHI KATSUYA;HAYAMIZU NAOYA;FUKUI HIROYUKI |
分类号 |
H01L21/306;C03C25/68;C09K13/04 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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