发明名称 ETCHING LIQUID, ETCHING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENT
摘要 An etching liquid used for selectively etching silicon nitride, the etching liquid includes: water; a first liquid that can be mixed with the water to produce a mixture liquid having a boiling point of 150° C. or more; and a second liquid capable of producing protons (H<SUP>+</SUP>). Alternatively, an etching liquid includes: water; phosphoric acid; and sulfuric acid, the phosphoric acid and the sulfuric acid having a volume ratio of 300:32 to 150:300.
申请公布号 US2008064223(A1) 申请公布日期 2008.03.13
申请号 US20070690438 申请日期 2007.03.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EGUCHI KATSUYA;HAYAMIZU NAOYA;FUKUI HIROYUKI
分类号 H01L21/306;C03C25/68;C09K13/04 主分类号 H01L21/306
代理机构 代理人
主权项
地址