| 摘要 |
A low stress sacrificial cap layer 120 having a silicon oxide liner film 130 , a low stress silicon film 140 , and a silicon nitride film. Alternatively, a low stress sacrificial cap layer 410 having a silicon oxide liner film 130 and a graded silicon nitride film 420 . Also, methods 300, 500 for fabricating a transistor 20, 400 having a low stress sacrificial cap layer 120, 410.
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