| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device the surface of a bump of which the electrode can be planarized and the growing speed of the bump electrode can be accelerated. SOLUTION: A surface protective film 104 covering the surface and circumferential surface of a pad electrode 103 is removed, to form a groove 110 between the remaining surface protective film 104 and the pad electrode 103. In growing a gold plating by a plating method to form a bump electrode 106 on the pad electrode 103, ununiformity of growing of gold plating in the vertical direction can be absorbed by growing of the gold plating on the groove 110 in the vertical and the horizontal directions, and the surface of the gold plating, i.e. the surface of the bump electrode 106 is planarized, as the growing progresses. That is, electrical connection reliability of the bump electrode 106 between the planarized surface 106a and an inner lead 120, is improved. COPYRIGHT: (C)2008,JPO&INPIT |
