| 摘要 |
PROBLEM TO BE SOLVED: To provide a winding type plasma CVD (chemical vapor deposition) system capable of performing the self-cleaning of a film deposition part without affecting a film in the process of film deposition. SOLUTION: The winding type plasma CVD system has: a film deposition mode where a gaseous starting material is introduced into a film deposition part 23 and a film F is deposited by plasma CVD; and a cleaning mode where a cleaning gas is introduced into the film deposition part 23 and the film deposition part 23 is plasma-cleaned. The system is provided with a belt-shaped cleaning mask, in which a shielding part 35a and an opening part 35b are formed, as a shielding means for shielding the film deposition face of the film F in the cleaning mode. In this way, the self-cleaning of the film deposition part can be performed without affecting the film even in the process of film deposition. COPYRIGHT: (C)2008,JPO&INPIT
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