| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact and inexpensive plasma treatment device capable of efficiently performing etching to a workpiece, and to provide a plasma treatment method capable of efficiently performing etching. SOLUTION: The plasma treatment device 1 using atmospheric pressure (ordinary pressure) plasma comprises: a treatment chamber 2; a supporting means 3 provided in the treatment chamber 2 and supporting a substrate (workpiece) 10; a plasma feeding means 4 for introducing a treatment gas into flame F, so as to convert the treatment gas (etching gas) into plasma, and feeding the plasma toward the substrate 10; and an exhausting means 5 for exhausting the inside of the treatment chamber 2. In the plasma treatment chamber 1, activated atoms (radicals) in the plasma fed toward the substrate 10 are reacted with the substrate 10, and, by releasing the reactant from the substrate 10, etching can be performed to the substrate 10. COPYRIGHT: (C)2008,JPO&INPIT
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