发明名称 Nitride-based light-emitting device and method of manufacturing the same
摘要 A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
申请公布号 US2008064130(A1) 申请公布日期 2008.03.13
申请号 US20070907649 申请日期 2007.10.16
申请人 SANYO ELECTRIC CO., LTD. 发明人 KUNISATO TATSUYA;HIROYAMA RYOJI;HATA MASAYUKI;OOTA KIYOSHI
分类号 H01L33/32 主分类号 H01L33/32
代理机构 代理人
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