| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving electric characteristics of a ferroelectric capacitor, and to provide a manufacturing method thereof. SOLUTION: The manufacturing method of the semiconductor device has a step of patterning a second conductive film to form it into an upper electrode 25a of a capacitor Q, a step of patterning a ferroelectric film to form it into a capacitor dielectric film 24a, and a step of patterning a first conductive film to form it into a lower electrode 23a. The step of forming the first conductive film has a step of forming a lower conductive layer 23b made of a noble metal other than iridium on a first interlayer insulating film, and a step of forming an upper conductive film 23c made of a conductive material as a material different from that of the lower conductive layer 23b and other than platinum. COPYRIGHT: (C)2008,JPO&INPIT
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