| 摘要 |
Using as the cathode foil, an etched aluminum foil with TiN film formed thereon by cathode arc plasma deposition process and using as the anode foil, an etched aluminum foil with a dielectric film formed on the surface thereof, as produced by subjecting the surface of the etched aluminum foil to a chemical treatment by a method of related art. Winding the anode foil together with the cathode foil and a separator, a capacitor element is formed; then immersing the capacitor element with EDT monomer and additionally with 40% to 60% ferric p-toluenesulfonate, the resulting capacitor element is heated at 20 DEG C to 180 DEG C for 30 minutes or more. Subsequently, the surface of the capacitor element is coated with a resin, for aging. |
