| 摘要 |
Provided is an interlayer wiring structure of a semiconductor device using carbon nanotubes, and a method of manufacturing the interlayer wiring structure. The interlayer wiring structure is a carbon nanotube bundle that connects a first electrode to a second electrode. The carbon nanotube bundle includes a plurality of carbon nanotubes grown from a catalyst layer that is formed on a first electrode. The carbon nanotube bundle is made in a manner that a portion of the carbon nanotube bundle close to the second electrode has higher density of carbon nanotubes than another portion of the carbon nanotube bundle close to the first electrode. The carbon nanotube bundle is surrounded by an interlayer dielectric. In one embodiment of a method of manufacturing the carbon nanotube interlayer wire, liquid droplets are distributed between the carbon nanotubes to induce surface tension between the carbon nanotubes. The surface tension makes the carbon nanotube bundle maintain higher density of carbon nanotubes in a portion close to the second electrode. |
