METHOD FOR MANUFACTURING PHASE CHANGE MEMORY DEVICE COMPRISING GST CHALCOGENIDE PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase change memory device. SOLUTION: The method for manufacturing a phase change memory device, in which a GST chalcogenide layer used as a phase change material is formed on a semiconductor substrate 200, a hard mask pattern 204a is formed on the GST chalcogenide layer, a GST chalcogenide pattern 202a is formed by dry-etching the GST chalcogenide layer using the hard mask pattern 204a having a high etching selection ratio for the GST chalcogenide layer as an etching mask in a helicon plasma dry-etching apparatus that utilizes a mixed gas of argon (Ar) gas and carbon tetrafluoride (CF4) gas as an etching gas, and the hard mask pattern 204a is formed by a titan nitride pattern. COPYRIGHT: (C)2008,JPO&INPIT