| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a silicon substrate or the like, which can perform patterning without using resist, patterning of a reserver or of the taking-out port of an electrode without using the resist after the formation of nozzle communication holes in particular to prevent resist protection failures in the nozzle communication hole portion. SOLUTION: The manufacturing method for the silicon substrate comprises: forming silicone oxide films 401a, 401b on the surface of a silicon base material 400; forming a silicone nitride film 402 on the silicone oxide films 401a, 401b in the patterning portion 400a on the surface of the silicone base material 400; further forming silicone oxide films 401a, 401b on the portions other than the patterning portion 400a on the surface of the silicone base material 400; removing the silicone nitride film 402 to expose the silicone base material 400 in the patterning portion 400a; and applying etching on the silicone base material 400. COPYRIGHT: (C)2008,JPO&INPIT
|
