| 摘要 |
A CMOS image sensor including a photodiode having a well having a first conductive type formed in a semiconductor substrate, a first ion-implantation layer formed in the semiconductor substrate having a conductive type being opposite to the first conductive type of the well, and a second ion-implantation layer having the first conductive type formed adjacent to the surface of the semiconductor substrate above the first ion-implantation layer. A transparent conductive electrode which is transparent to visible rays may be formed on the semiconductor substrate to cover the second ion-implantation layer.
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