<p>A light emitting diode and a method of fabricating a light emitting diode. the diode comprises a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.</p>
申请公布号
WO2008030183(A1)
申请公布日期
2008.03.13
申请号
WO2006SG00263
申请日期
2006.09.08
申请人
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;SOH, CHEW BENG;CHUA, SOO JIN;HARTONO, HARYONO