发明名称 |
PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS |
摘要 |
<p>A nitriding process is performed at a process temperature of 500°C or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.</p> |
申请公布号 |
EP1898456(A1) |
申请公布日期 |
2008.03.12 |
申请号 |
EP20060757104 |
申请日期 |
2006.06.07 |
申请人 |
TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED |
发明人 |
OHMI, TADAHIRO;TERAMOTO, AKINOBU;HONDA, MINORU;NAKANISHI, TOSHIO |
分类号 |
H01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|