| 摘要 |
<p>A trench layer photo process is provided to improve roughness of a line edge by optimizing an anti-reflective layer, photoresist, soft bake process temperature, and post exposure bake temperature. An anti-reflective layer coating process is performed to prevent the reflection of incident light on a trench layer(S1). A coating process is performed to coat photoresist on the anti-reflective layer(S2). A soft bake process is performed to remove a solvent from the photoresist and to harden the photoresist(S3). An exposure process is performed to align and expose a photomask on the photoresist(S4). A developing process is performed to develop the exposed photoresist(S5). A post exposure bake process is performed to increase adhesive strength between the trench layer and the photoresist(S6).</p> |
