| 摘要 |
<p>A method of forming a gate in a NAND flash memory device is provided to increase tungsten ratio in a tungsten silicide layer by forming and annealing a second polysilicon layer and the tungsten silicide layer. A tunnel oxide layer(102), a first polysilicon layer(104) and a dielectric layer(106) are sequentially formed on a semiconductor substrate(100). A second polysilicon layer(108), a tungsten silicide layer(110) and a hard mask layer(112) are sequentially formed on the dielectric layer. Then, the hard mask layer, the tungsten silicide layer, the second polysilicon layer, the dielectric layer and the first polysilicon layer are sequentially etched to form a gate. An annealing process is performed on the substrate comprising the gate.</p> |
