SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor device and a fabricating method thereof are provided to prevent metal material of a contact plug from remaining on a sidewall of a contact hole by simultaneously etching the contact plug and a barrier metal layer. Insulating layers(120-150) are formed on a semiconductor substrate(110) having a conductive region. The insulating regions are etched to form a contact hole(151) for exposing the conductive region. A barrier metal layer(153) for covering a sidewall and a bottom of the contact hole is formed, and then a contact plug(155) is formed in the contact hole by interposing the barrier metal layer between the contact plug and the contact hole. An etching process is performed on the substrate to recess the barrier metal layer and the contact plug in such a manner that a top surface of the contact plug protrudes upward beyond a top surface of the barrier metal layer. A capping plug(157) is formed to cover the recessed barrier metal layer and the recessed contact plug. A capacitor(170) is formed on the capping plug.