发明名称 PLASMA PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING THEREOF
摘要 A plasma processing apparatus and a method for processing a substrate using the same are provided to prevent a local charge-up problem of an electrostatic chuck by neutralizing electric charges accumulated in a substrate. An electrostatic chuck(12) is installed in a chamber(15) in order to fix a substrate(11) by using electrostatic force. A process gas supply unit(20) supplies a process gas to the electrostatic chuck. An ionization unit(40) ionizes the process gas received from the process gas supply unit and supplies the ionized gas to the electrostatic chuck in order to neutralize the electric charges accumulated in the substrate. The process gas supplied from the process gas supply unit is supplied through two gas supply lines(50) to the electrostatic chuck. The ionization unit is installed at one of the gas supply lines.
申请公布号 KR20080022754(A) 申请公布日期 2008.03.12
申请号 KR20060086319 申请日期 2006.09.07
申请人 ADP ENGINEERING CO., LTD. 发明人 SON, HYOUNG KYU
分类号 H01L21/68;H01L21/3065 主分类号 H01L21/68
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