PLASMA GENERATING APPARATUS AND PLASMA GENERATING METHOD

摘要

An apparatus and a method for generating plasma are provided to enhance an etch selectivity by supplying electrons having high temperatures to a main plasma generating space. An apparatus includes a chamber(1) having a plasma generating space. A lower electrode(3) is positioned within the chamber, and has a table for supporting a semiconductor substrate. An upper electrode(2) is positioned to face the lower electrode, and is disposed within the chamber to constitute a first plasma generating source together with the lower electrode. A second plasma generating source is positioned at a higher location than that of a lower surface of the upper electrode, and is disposed at an outer circumference of the upper electrode. A power supply supplies a power to the first and second plasma generating sources.