发明名称 ALKALINE ETCHING SOLUTION FOR SEMICONDUCTOR WAFER AND ALKALINE ETCHING METHOD
摘要 An alkaline etching solution for a semiconductor wafer and an alkaline etching method are provided to reduce the size of a facet to improve surface roughness of the silicon by using bromate containing alkaline etching solution as a caustic alkaline aqueous solution. An alkaline etching solution for a semiconductor wafer is a caustic alkaline aqueous solution containing bromate. An alkaline etching method comprises the step of performing an alkaline etching using the caustic alkaline aqueous solution containing bromate, wherein the wafer after the etching process has a surface roughness(Ra) equal to or lower than 0.27 mum.
申请公布号 KR20080023119(A) 申请公布日期 2008.03.12
申请号 KR20070086054 申请日期 2007.08.27
申请人 SILTRONIC AG 发明人 NISHIMURA SHIGEKI
分类号 H01L21/3063 主分类号 H01L21/3063
代理机构 代理人
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