| 摘要 |
<p>Nanostructures with 0, 1, 2 and 3 dimensions, with negative differential resistance and method for making these nanostructures. A nanostructure according to the invention may notably be used in nanoelectronics. It comprises at least one structure (32) or at least one plurality of said at least one structure, at the surface of a silicon carbide substrate (30), the structure being selected from quantum dots, atomic segments, atomic lines and clusters, and at least one metal deposit (34), this metal deposit covering at least the structure or at least the plurality of said at least one structure, or of the combination of two or more of these nanostructures with 0, 1, 2 or 3 dimensions.</p> |
