NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A non-volatile memory device and a manufacturing method thereof are provided to electrons trapped in a charge trapping layer pattern by removing side portions of the charge trapping layer pattern through isotropic etching. A tunnel insulating layer pattern(140) is formed on a channel region of a substrate(100). A charge trapping layer pattern(144) is formed on the tunnel insulating layer pattern to trap electrons from the channel region. A dielectric layer pattern(136) is formed on the charge trapping layer pattern, and a gate electrode is formed on the dielectric layer pattern. Spacers(132) are formed on sidewalls of the gate electrode. The charge trapping layer pattern has a width smaller than a distance between outer surfaces of the spacers. The width of the charge trapping layer pattern is smaller than that of the tunnel insulating layer pattern.