Method for producing silicon single crystal and method for producing silicon wafer

摘要

A method for producing a low-resistivity silicon single crystal in which a silicon wafer having a crystal axis orientation [110] can be obtained and dislocations are sufficiently eliminated, and a method for producing a low-resistance silicon wafer having the crystal axis orientation [110] from the silicon single crystal obtained by the low-resistivity silicon single crystal production method. In this Czochralski method, the silicon single crystal whose center axis is inclined by 0.6° to 10° relative to a crystal axis [110] is grown by dipping a silicon seed crystal in a silicon melt. Boron as a dopant is added in the silicon melt so that a boron concentration ranges from 6.25×10 17 to 2.5×10 20 atoms/cm3, a center axis of the silicon seed crystal is inclined by 0.6° to 10° relative to the crystal axis [110], and the silicon seed crystal has the substantially same boron concentration as that of a neck portion formed in the single crystal grown from the silicon melt.