| 摘要 |
<p>An organic semiconductor thin film transistor and a manufacturing method thereof are provided to increase a hole current by forming an organic semiconductor layer on predetermined portions of a source electrode, a planarized layer and a drain electrode. A planarized layer(4) is formed between a source electrode(5) and a drain electrode to planarize a step height of both electrode terminals. The planarized layer has an anchoring force of crystallization orientation for an organic semiconductor material. An organic semiconductor layer(7) is formed on predetermined portions of the planarized source electrode, the planarized layer and the drain electrode. The planarized layer is a poly imide layer having good anchoring force of crystallization orientation.</p> |
