| 摘要 |
<p>Provided is an avalanche photodiode including a first electrode; and a substrate including a first semiconductor layer made of a first conduction type electrically connected to the first electrode, in which at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer made of a second conduction type with a larger band gap than the light absorption layer are deposited on the substrate; the second semiconductor layer is separated into an inner region and an outer region by a groove formed therein; and the inner region is electrically connected to a second. With such a configuration, it is possible to provide the avalanche photodiode with a low dark current and high long-term reliability in a simple process. In addition, the outer region is provided with an outer trench, and at least light absorption layer is removed by the outer trench to form a side face of the light absorption layer. With such a configuration, it is possible to further reduce the dark current.</p> |
