发明名称 ELECTRONIC DEVICE MANUFACTURE BY ENERGY BEAM CRYSTALLISATION
摘要 <p>The invention provides a method of manufacturing a large-area electronic device, for example a flat panel display, comprising thin-film circuit elements, and also laser apparatus for crystallizing a portion of a semiconductor thin-film (1) with a beam (11) of set energy. The energy of the beam (11) is set in accordance with the output from a light detector (22) to regulate the crystallization of a device portion (3,4 and/or 5) of a semiconductor thin film (1) at which the beam (11) is subsequently directed with its set energy. The light detector (22) monitors the surface quality of a previously crystallized portion (2). In accordance with the present invention, the light detector (22) is located at a position outside the specular reflection path (25) of the light returned by the surface area of the crystallized portion (2) and detects a threshold increase (D) in intensity (Is) of the light (26) being scattered by the surface area of the crystallized portion. This threshold increase (D) occurs when the energy (Ep) of the beam (11) is increased sufficiently to cause the onset of surface roughening.</p>
申请公布号 EP0879477(B1) 申请公布日期 2008.03.12
申请号 EP19970940302 申请日期 1997.09.29
申请人 TPO HONG KONG HOLDING LIMITED 发明人 MCCULLOCH, DAVID, JAMES;BROTHERTON, STANLEY, DAVID
分类号 H01L21/302;H01L21/20;H01L21/263;H01L21/268;H01L21/336;H01L21/66;H01L29/786 主分类号 H01L21/302
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