| 摘要 |
A method for fabricating a silicon layer using Si3H8 gas and a method for fabricating a semiconductor device by using the same are provided to increase on-current of a transistor by performing an activation process in a temperature level lower than a temperature level for processing a silicon layer. A semiconductor substrate is loaded on a chuck which is installed within a process chamber. An internal space of the process chamber is formed as a vacuum state. A doped silicon layer is formed on an upper surface of the semiconductor substrate by implanting process gas including Si3H8 gas and dopant gas into the process chamber. The semiconductor is heated at the temperature of 400 to 600 degrees centigrade. The dopant gas includes one selected from a group including PH3, AsH3, diluted PH3, diluted AsH3, B2H6, BCl3, diluted B2H6, and diluted BCl3.
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