发明名称 |
Semiconductor MOS transistor device and method for making the same |
摘要 |
A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A gate dielectric layer is formed on an active area of a substrate. A gate electrode is patterned on the gate dielectric layer. The gate electrode has vertical sidewalls and a top surface. A liner is formed on the vertical sidewalls of the gate electrode. A nitride spacer is formed on the liner. An ion implanted is performed to form a source/drain region. After salicide process, an STI region that isolates the active area is recessed, thereby forming a step height at interface between the active area and the STI region. The nitride spacer is removed. A nitride cap layer that borders the liner is deposited. The nitride cap layer has a specific stress status.
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申请公布号 |
US7342284(B2) |
申请公布日期 |
2008.03.11 |
申请号 |
US20060307660 |
申请日期 |
2006.02.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TING SHYH-FANN;HUANG CHENG-TUNG;HUNG WEN-HAN;CHENG TZYY-MING;SHEN TZER-MIN;SHENG YI-CHUNG |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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