发明名称 |
Power on sequence for a flash memory device |
摘要 |
A method of performing a power on sequence for a flash memory includes applying device voltage to the flash memory and performing an error bit check on at least one memory cell in the flash memory during initial power up. The at least one memory cell in the flash memory is read only after the error bit check determines that the device voltage is stable. The data read from the at least one memory cell is loaded to an information register.
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申请公布号 |
US7342844(B2) |
申请公布日期 |
2008.03.11 |
申请号 |
US20060462257 |
申请日期 |
2006.08.03 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
SHEN JIAN-YUAN;CHU CHI-LING;YANG CHOU-YING |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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