| 发明名称 |
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device |
| 摘要 |
Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a surfactant and a solution comprising polymer obtainable by hydrolyzing and condensing, in the presence of the surfactant, one or more of alkoxysilane represented by Formula (1) and one or more of alkoxysilane represented by Formula (2): <?in-line-formulae description="In-line Formulae" end="lead"?>(R<SUP>1</SUP>)<SUB>m</SUB>Si(OR<SUP>2</SUP>)<SUB>4-m</SUB> (1)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>R<SUP>3</SUP>Si(R<SUP>4</SUP>)<SUB>n</SUB>(OR<SUP>5</SUP>)<SUB>3-n</SUB> (2)<?in-line-formulae description="In-line Formulae" end="tail"?> Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
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| 申请公布号 |
US7341775(B2) |
申请公布日期 |
2008.03.11 |
| 申请号 |
US20030706861 |
申请日期 |
2003.11.12 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. |
发明人 |
HAMADA YOSHITAKA;YAGIHASHI FUJIO;NAKAGAWA HIDEO;SASAGO MASARU |
| 分类号 |
C01B33/12;H01L23/48;C01B37/02;C08K5/19;C09D5/25;C09D183/02;C09D183/04;H01L21/312;H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
C01B33/12 |
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