| 摘要 |
A method for prevention of increase in particles in copolymer for semiconductor resist, which comprises passing, through a filter containing a resin having an amino group and/or an amide bond a copolymer solution for semiconductor resist which contains a copolymer for semiconductor resist having a polar group-containing recurring unit and an alicyclic structure-containing recurring unit and which contains no ionic additive. With the method, there can be obtained a copolymer semiconductor resist, which can be suitably used in a resist film used for formation of a fine pattern in semiconductor production and which is very low in formation of particle s during storage and accordingly generates substantially no defect after development.
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