发明名称 Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus
摘要 A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.
申请公布号 US7342288(B2) 申请公布日期 2008.03.11
申请号 US20050524465 申请日期 2005.02.15
申请人 SHARP KABUSHIKI KAISHA 发明人 FUJII AKIYOSHI;NAKABAYASHI TAKAYA
分类号 H01L29/417;G02F1/1368;G09F9/30;H01L21/288;H01L21/3205;H01L21/336;H01L29/786 主分类号 H01L29/417
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