发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.
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申请公布号 |
US7341900(B2) |
申请公布日期 |
2008.03.11 |
申请号 |
US20050186838 |
申请日期 |
2005.07.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAYAMA KAZUYA;AIDA SATOSHI;KOUZUKI SHIGEO;IZUMISAWA MASARU |
分类号 |
H01L21/338;H01L21/265;H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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