Image transfer member, image transfer device and image forming system

摘要

An image transfer member, an image transfer device and an image forming system employing the image transfer member and device are disclosed. The image transfer member comprises a base layer, and a surface layer formed from a semi-conductive material above the base layer to receive the developer image transferred from the photoconductor. The surface layer forms a contact inscribed angle theta in the range of 10° to 50° between the surface thereof and the developer image. The image transfer member has a voltage-current characteristic exhibiting a current density (CD) in the range of 0.6 muA/cm²<=CD<=1.5 muA/CM² at 1 KV voltage, and a voltage decay characteristic exhibiting a voltage decay time (DT) in the range of 0.4 sec<=DT<=3 sec for the voltage decay from 500 V to 100 V. The present invention avoids a transfer defect such as transfer void produced by breakdown caused when a high bias voltage is applied to a developer image having a high electric charge and to significantly improve the transfer efficiency.