Semiconductor device and method of manufacturing the same

摘要

A semiconductor device manufacturing method comprises the steps of forming a metal film ( 24 ) on an organic interlayer insulating film ( 22 ) formed over a semiconductor substrate to get a metal diffusion preventing metal carbide film ( 23 ) on a boundary between the organic interlayer insulating film ( 22 ) and the metal film ( 24 ), and leaving the metal carbide film ( 23 ) on the organic interlayer insulating film ( 22 ) by removing selectively the metal film ( 24 ) from the metal carbide film ( 23 ).