发明名称 APPARATUS AND METHOD OF DEPOSITING FILMS USING BIAS
摘要 A method for depositing films using bias is provided to separately control deposition behavior by applying a bias to a substrate in consideration of charged behavior of charged nano-particles. A substrate is loaded in a chamber(15), and a gas supply system(20) is adapted to introduce a reaction gas into the chamber. A filament(30) is adapted to emit heat for dissociating the introduced reaction gas, and a power supply(70) is adapted to supply a constant alternate current or direct current voltage. A bias supply unit(80) is adapted to apply a bias to at least one of a top, a side and a bottom of the substrate using the voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas. The bias supply unit is separated from the substrate.
申请公布号 KR20080022416(A) 申请公布日期 2008.03.11
申请号 KR20060085819 申请日期 2006.09.06
申请人 SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION 发明人 HWANG, NONG MOON;LEE, JAE IK
分类号 H01L21/205 主分类号 H01L21/205
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