发明名称 |
APPARATUS AND METHOD OF DEPOSITING FILMS USING BIAS |
摘要 |
A method for depositing films using bias is provided to separately control deposition behavior by applying a bias to a substrate in consideration of charged behavior of charged nano-particles. A substrate is loaded in a chamber(15), and a gas supply system(20) is adapted to introduce a reaction gas into the chamber. A filament(30) is adapted to emit heat for dissociating the introduced reaction gas, and a power supply(70) is adapted to supply a constant alternate current or direct current voltage. A bias supply unit(80) is adapted to apply a bias to at least one of a top, a side and a bottom of the substrate using the voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas. The bias supply unit is separated from the substrate.
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申请公布号 |
KR20080022416(A) |
申请公布日期 |
2008.03.11 |
申请号 |
KR20060085819 |
申请日期 |
2006.09.06 |
申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
HWANG, NONG MOON;LEE, JAE IK |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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