Schottky barrier diode and method thereof

摘要

Pt/n^-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n^-GaN Schottky barrier diodes have very large active areas, up to 1 cm², which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n^-GaN Schottky diodes of sizes 0.25 cm² and 1 cm² have been fabricated from n^-/n⁺ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm² and 1 cm² diodes both configured at a 0.5V reverse bias.