| 摘要 |
A program method of a flash memory device having a multi-level cell is provided to reduce interference between memory cells by changing the sequence of data corresponding to each threshold voltage and then performing program operation along the direction of a word line. A flash memory device including a multi-level cell comprises two memory cell arrays having a plurality of strings. The string is constituted with a plurality of memory cells sharing drains and sources through a drain selection transistor and a source selection transistor. According to a program method of the flash memory device, the program operation is performed along the direction of a word line. Program verify and read operation are performed along the direction of a page.
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