METHOD OF FORMING A METAL LINE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to reduce an RC delay by suppressing the generation of voids and preventing the damage caused by plasma through improvement of gap-fill characteristics. A barrier metal layer, a conductive layer, and an anti-reflective layer are sequentially formed on an upper surface of a semiconductor substrate(100). A contact hole(135) is formed by etching sequentially the anti-reflective layer, the conductive layer, and the barrier metal layer. A sealing oxide layer(140) is formed on an upper surface of the entire structure including a sidewall of the contact hole. The conductive layer is formed by using a material having an oxidation ratio higher than the oxidation ratio of the anti-reflective layer.