Memory device and method for operating a memory device

摘要

A memory device ( 1 ) includes a memory array ( 2 ). The memory array ( 2 ) has at least one memory area ( 5 ) that includes a plurality of conductive lines ( 3 ) and a plurality of memory cells ( 4 ) connected to the conductive lines ( 3 ). The conductive lines ( 3 ) are arranged at positions (n) within the memory area ( 5 ). The memory cells ( 4 ) are erasable and are programmable by application of an electrical programming pulse (P) supplied via a respective conductive line ( 3 ). The memory device ( 1 ) is constructed such that for programming of a memory cell ( 4 ) an electrical programming pulse (P) is applied which has a programming pulse profile (PP) depending on the position (n) of a respective conductive line ( 3 ) to which the memory cell ( 4 ) is connected.