发明名称 Ion beam current monitoring
摘要 An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.
申请公布号 US7342240(B2) 申请公布日期 2008.03.11
申请号 US20060361765 申请日期 2006.02.24
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 WALTHER STEVEN R.;EVANS MORGAN
分类号 H01J37/317;H01J37/304 主分类号 H01J37/317
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