| 摘要 |
A method and an apparatus for fabricating a semiconductor device are provided to prevent debonding of phosphor atom from a silicon substrate by forming an oxide layer on a surface of a diffusion layer. A silicon substrate(200) with a resist is loaded in a process chamber(201), and is heated by a heating member. A gas is supplied into the process chamber by a gas supply line(232). A plasma generating unit generates a plasma to excite the gas supplied from the gas supply line. The heating member, the gas supply line and the plasma generating unit are controlled by a controller(121). The controller supplies a gas containing phosphorus atoms into the process chamber via the gas supply line, while the substrate is maintained at a temperature lower than deterioration temperature of the resist. The controller generates the plasma in the process chamber, and supplies the gas containing the excited phosphor atoms onto the substrate to form a diffusion layer of the phosphor atoms.
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