METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to reduce a wiring capacitance value by using a nitride layer instead of a Ti/TiN layer as a stopper. A first metal layer(102), a nitride layer(103), and an interlayer dielectric(104) are sequentially deposited on a semiconductor substrate(100) including a lower structure. A via hole is formed by etching a predetermined region of the interlayer dielectric, in order to expose the nitride layer. A first metal layer is exposed by etching the exposed nitride layer at a bottom surface of the via hole. A conductive material is deposited on an entire structure in order to bury the via hole. A contact(107) is formed within the via hole by performing a CMP(Chemical Mechanical Polishing) process. A second metal layer(108) is formed on the entire structure including the contact.