发明名称 |
Alternative interconnect structure for semiconductor devices |
摘要 |
A semiconductor interconnect structure includes an organic and/or photosensitive etch buffer layer disposed over a contact surface. The structure further provides an interlevel dielectric formed over the etch buffer layer. A method for forming an interconnect structure includes etching to form an opening in the interlevel dielectric, the etching operation being terminated at or above the etch buffer layer. The etch buffer layer is removed to expose the contact surface using a removal process that may include wet etching, ashing or DUV exposure followed by developing or other techniques that do not result in damage to contact surface. The contact surface may be a conductive material such as silicide, salicide or a metal alloy.
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申请公布号 |
US7341935(B2) |
申请公布日期 |
2008.03.11 |
申请号 |
US20040877103 |
申请日期 |
2004.06.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSU JU-WANG;SHIEH JYU-HORNG;HUANG YI-CHUN |
分类号 |
H01L21/4763;H01L21/311;H01L21/336;H01L21/768;H01L23/52 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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