发明名称 Method for manufacturing semiconductor device
摘要 A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.
申请公布号 US7341924(B2) 申请公布日期 2008.03.11
申请号 US20060452987 申请日期 2006.06.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TAKAYAMA TORU;ARAI YASUYUKI;SUZUKI YUKIE
分类号 H01L21/30;H01L21/20;H01L21/46;H01L21/762;H01L21/77;H01L21/84 主分类号 H01L21/30
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