发明名称 Plasma enhanced atomic layer deposition system and method
摘要 A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone proximate the substrate and a peripheral zone proximate to a peripheral edge of the substrate. Also included is introducing a first process material within the process chamber, introducing a second process material within the process chamber and coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and the second process materials at a surface of the substrate. Electromagnetic power is coupled to a process electrode to generate a substrate zone plasma in the substrate zone that ionizes contaminants substantially in a region of the substrate, and electromagnetic power to a peripheral electrode to generate a peripheral zone plasma in the peripheral zone having a characteristic different from the substrate zone plasma such that ionized contaminants are transported from the substrate zone to the peripheral zone in the process chamber.
申请公布号 US7341959(B2) 申请公布日期 2008.03.11
申请号 US20050084003 申请日期 2005.03.21
申请人 TOKYO ELECTRON LIMITED 发明人 BRCKA JOZEF
分类号 H01L21/31 主分类号 H01L21/31
代理机构 代理人
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