METHOD OF MANUFACTURING FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to form an oxide layer having good quality by forming and oxidizing an amorphous silicon layer through radical oxidization to form a dielectric layer. A polysilicon layer(20) for a floating gate is formed on a semiconductor substrate in a predetermined pattern, and then a first insulating layer(23) is formed on the entire surface of the substrate comprising the polysilicon layer. An amorphous silicon layer is formed on the entire surface of the substrate comprising the first insulating layer, and then the amorphous silicon layer is oxidized to form a second insulating layer(24). A conductive layer for a control gate is formed on the second insulating layer.