发明名称 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION
摘要 A chemically amplified positive photoresist composition is provided to increase the light transmission by using an additive capable of inhibiting readsorption of a hydrophobic resin onto a wafer, to realize high sensitivity and resolution, and to form a high-quality pattern. A chemically amplified positive photoresist composition comprises: (A) a resin that is insoluble or hardly soluble in an aqueous alkali solution in nature but becomes soluble in an aqueous alkali solution after acid-liable microfibers are dissociated under the action of an acid; (B) a compound generating an acid under the action of light or radiation; and (C) a compound represented by the following formula 3. In formula 3, each of R7 and R8 represents a bond, a halogen-substituted or non-substituted C1-C6 linear or branched alkylene, or a halogen-substituted or non-substituted C2-C6 alkenylene, wherein the compound represented by formula 3 has a molecular weight of 100-1000.
申请公布号 KR20080022347(A) 申请公布日期 2008.03.11
申请号 KR20060085690 申请日期 2006.09.06
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 PARK, HAN WOO;PARK, JONG WON
分类号 G03F7/039 主分类号 G03F7/039
代理机构 代理人
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