| 摘要 |
A method for cutting a fuse element and a method for fabricating a semiconductor device are provided to efficiently absorb energy of a laser beam by using a vertically long fuse element. A method for cutting a fuse element(20) employed in a semiconductor device includes steps of providing the semiconductor device, and irradiating a laser beam to the fuse element, in which the laser beam has a depth of focus smaller than a height of the fuse element, and has a diffraction limit greater than a diameter of the fuse element. A depth of focus is half or less than the height of the fuse element, and the fuse element is cut without substantially destructing a passivation film(60) located at an upper portion of the fuse element. |
